Textbook in PDF format

High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology.
Key Features
Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations.
Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability.
Provides a broad overview of the topic, from materials integration to circuits.
Readership Materials science researchers and electronic engineers in research and design.
CMOS and Beyond CMOS Scaling Challenges.
Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance.
Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices.
III-N Epitaxy on Si for Power Electronics.
Impact of Defects on the Performance of High-Mobility Semiconductor Devices.
SiGe Devices.
III-V Devices and Technology for CMOS.
Beyond CMOS Steep-Slope Devices and Energy Efficient Nanoelectronics.
Optoelectronic Devices Integrated on Silicon.
Circuits